Postdoctoral Research Associate
PhD in Physics, magna cum laude, Max Planck Institute of Microstructure Physics (Germany), 2016
Office: Room 2088 (Birck)
Dr. Senichev obtained his PhD from the Martin Luther University of Halle-Wittenberg and the Max Planck Institute of Microstructure Physics under a joint initiative “International Max Planck Research School for Science and Technology of Nanostructures”. His research was primarily focused on studying crystal-phase quantum structures in GaAs nanowires by cross-correlated near-field scanning optical microscopy and structural analysis. He also contributed to the understanding of optical properties of high-indium-content InGaN structures grown directly on silicon as part of his collaboration with the Institute of Optoelectronic Systems and Microtechnology of the Technical University of Madrid.
Since March 2017 he has joined the group of Prof. Manfra to contribute to development of novel near- and far-infrared optoelectronic devices based on intersubband transitions in nonpolar III-Nitride materials. His research effort involves material design, molecular beam epitaxy growth, and characterization, as well as device fabrication and testing.