The gallium nitride (GaN) MBE system is a Riber 32.  The machine includes a load lock, a sample outgassing chamber, and a main growth chamber. In the main growth chamber the system is configured with 2 gallium sources, 2 aluminum sources, a nitrogen plasma source, an indium source as well as a source for silicon. It is equipped with in-situ diagnostics including a reflection high-energy electron diffraction (RHEED) gun for measuring sample surface evolution as well as a residual gas analyzer. Projects include the growth of AlGaN/GaN and AlInN/GaN heterostructures both on polar and non-polar GaN substrates for intersubband device applications.  In addition this system has been used to produce the highest 2DEG mobility ever reported in an AlGaN/GaN heterostructure.