Archive for category: Engineers and Post Docs

Research Associate, Microsoft Corporation
Visiting Scholar, Purdue University

E-mail: geoff@purdue.edu

Dr. Gardner began working in Prof. Manfra’s research program in 2009, and is now part of Station Q Purdue.  He is a native Boilermaker receiving a B.Sc., M.Sc. and PhD in applied physics, physics and materials engineering respectively at Purdue University.  Previously, Geoff served as a research engineer at the Birck Nanotechnology Center and as an experimental engineer at the Applied Physics Laboratory, both at Purdue. As part of Station Q, Dr. Gardner oversees lab operations and his research focuses on superconductor deposition and semiconductor growth of hybrid structures for quantum computing.

Dr. Sergei Gronin obtained his PhD from the Ioffe Institute of Saint-Petersburg, Russia, developing MBE grown of low threshold lasers based on II-VI materials for green and yellow spectral region.  Prior to joining Professor Manfra’s group as part of Microsoft Station Q Purdue in May, 2017 he was a Junior Researcher in the Laboratory of Quantum-size heterostructures (head. Professor Sergey Ivanov) at Ioffe Institute. As part of Station Q, Dr. Gronin develops MBE growth for heterostructures of superconductors and highly spin-orbit coupled III-V semiconductors.

Postdoctoral Research Associate

PhD in Physics, magna cum laude, Max Planck Institute of Microstructure Physics (Germany), 2016

Email: senichev@purdue.edu

Office: Room 2088 (Birck)

 

Dr. Senichev obtained his PhD from the Martin Luther University of Halle-Wittenberg and the Max Planck Institute of Microstructure Physics under a joint initiative “International Max Planck Research School for Science and Technology of Nanostructures”. His research was primarily focused on studying crystal-phase quantum structures in GaAs nanowires by cross-correlated near-field scanning optical microscopy and structural analysis. He also contributed to the understanding of optical properties of high-indium-content InGaN structures grown directly on silicon as part of his collaboration with the Institute of Optoelectronic Systems and Microtechnology of the Technical University of Madrid.

 

Since March 2017 he has joined the group of Prof. Manfra to contribute to development of novel near- and far-infrared optoelectronic devices based on intersubband transitions in nonpolar III-Nitride materials. His research effort involves material design, molecular beam epitaxy growth, and characterization, as well as device fabrication and testing.

Email: atuaz@purdue.edu

I received my PhD from the University of Grenoble Alpes (France) in 2017, working in collaboration with the CEA-Leti and Inac on the characterization of local strain field inside HgCdTe photodiodes, used for the infrared detection. I joined Professor Manfra’s group as part of Station Q Purdue in 2018 in order to develop the fabrication processing of superconductors and high spin-orbit coupled III-V semiconductors heterostructures.