The Quantum Semiconductor Systems Group Microsoft Quantum Purdue
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma-assisted molecular beam epitaxy
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma-assisted molecular beam epitaxy
A.Senichev, T.Nguyen, R.E.Diaz, B.Dzuba, M.Shirazi-HD, Y.Cao, M.J.Manfra and O.Malis. Journal of Crystal Growth 500
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https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg00adminhttps://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svgadmin2018-03-15 00:00:002025-11-17 13:52:23Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma-assisted molecular beam epitaxy