
Contact
Purdue University
Birck Nanotechnology Center
Room 2050
1205 W State Street
West Lafayette, IN 47907-2057
765-496-7703
Purdue University
Department of Physics and Astronomy
Room 84
525 Northwestern Avenue
West Lafayette, IN 47907-2036
765-494-3016
Manfra Group wishes Dr. Teng Zhang all the best at Quantum Circuits
January 13, 2025
Congratulations to Quantum Circuits' newest Fabrication Engineer!
Congratulations and welcome to parenthood Dr. Shuang Liang
January 10, 2025
Congratulations on the new bundle of joy, Shuang!
Manfra Group wishes Dr. Sara Metti all the best at IBM
January 6, 2025
Congratulations to IBM's newest Hardware Developer!
Congratulations Prof. Qi Qian for being named a finalist in MIT Technology Review's Innovators Under 35 Asia Pacific
September 27, 2024
Congratulations to Quantum Semiconductor System Group alumni, Prof. Qi Qian, for being named an MIT Technology Review Innovators Under 35 Asia Pacific finalist! She is being recognized for providing transformative applications in the field of quantum devices. We look forward to her continued success.
Congratulations to Matt Mann for passing his PhD preliminary exam
July 26, 2024
Congratulations on passing your School of Electrical and Computer Engineering preliminary exam, Matthew Mann! We'll look forward to your defense.
Congratulations to Shuang Liang for successfully defending his PhD thesis
July 12, 2024
20 Top Universities for Quantum Computing Research
May 21, 2024
The Quantum Insider has named Purdue University in the 20 Top Universities For Quantum Computing Research! The article specifically recognizes Prof. Michael Manfra and the research he drives as a leader in quantum materials and devices.
Congratulations to Teng Zhang for successfully defending his Ph.D. thesis
April 02, 2024
Congratulations to Sara Metti for her publication in the Physics Review B
December 11, 2023
The Manfra group congratulates Sara Metti on her recent publication!
Electronic g factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot
S. Metti, C. Thomas, and M. J. Manfra
Physics Review B (2023) doi.org/10.1103/PhysRevB.108.235306 [PDF]
FIG. 1. b. (left) Model of the device design with dual layer gates insulated with 20 nm Al2O3 (not shown for clarity) below the fine gates and 40 nm Al2O3 below the global top gate. The first layer of fine gates defines the quantum dot, while the second layer serves as a global gate to control the carrier density.
Congratulations to Sara Metti for successfully defending her Ph.D. thesis
November 15, 2023