December 11, 2023
The Manfra group congratulates Sara Metti on her recent publication!
FIG. 1. b. (left) Model of the device design with dual layer gates insulated with 20 nm Al2O3 (not shown for clarity) below the fine gates and 40 nm Al2O3 below the global top gate. The first layer of fine gates defines the quantum dot, while the second layer serves as a global gate to control the carrier density.