Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
J. W. P. Hsu, M. J. Manfra, S. N. G. Chu, C. H. Chen, L. N. Pfeiffer, and R. J. Molnar.. Applied Physics Letters 78 25, 3980-3982 [PDF]