Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide semiconductor field-effect transistors

Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide semiconductor field-effect transistors
M. Si, J. J. Gu, X. Wang, J. Shao, X. Li, M. J. Manfra, R. G. Gordon, and P. D. Ye.. Appl. Phys. Lett. 102, 093505 [PDF]