Electron mobility exceeding 160000 cm2/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy

Electron mobility exceeding 160000 cm2/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy
M. J. Manfra, K. W. Baldwin, A. M. Sergent, K. W. West, R. J. Molnar, and J. Caissie.. Applied Physics Letters 85, 22 5394-5396 [PDF]