Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma-assisted molecular beam epitaxy

Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma-assisted molecular beam epitaxy
A.Senichev, T.Nguyen, R.E.Diaz, B.Dzuba, M.Shirazi-HD, Y.Cao, M.J.Manfra and O.Malis. Journal of Crystal Growth 500 [PDF] [DOI]