Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76 As modulation-doped quantum wells with extremely low x

Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76 As modulation-doped quantum wells with extremely low x
G. C. Gardner, J. D. Watson, S. Mondal, N. Deng, G. A. Csáthy, and M. J. Manfra. Appl. Phys. Lett. 102, 252103 [PDF]