High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE
M. J. Manfra, N. G. Weimann, O. Mitrofanov, T. Waechtler, and D. M. Tennant.. Physica Status Solidi A-Applied Research 200 1, 175-178 [PDF]