Mobility exceeding 100 000 cm2/V s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum

Mobility exceeding 100 000 cm2/V s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
Teng Zhang, Tyler Lindemann, Geoffrey C. Gardner, Sergei Gronin, Tailung Wu, and Michael J. Manfra. Physical Review Materials [PDF] [DOI]