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Mobility exceeding 100 000 cm2/V s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
Mobility exceeding 100 000 cm2/V s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
Teng Zhang, Tyler Lindemann, Geoffrey C. Gardner, Sergei Gronin, Tailung Wu, and Michael J. Manfra. Physical Review Materials
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00adminadmin2023-03-15 00:00:002025-11-17 13:52:16Mobility exceeding 100 000 cm2/V s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
