Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates
Hatke, A. T.; Wang, T.; Thomas, C. ; G.C. Gardner; M.J. Manfra. Appl. Phys. Lett. 111, 142106 [PDF]