Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility > 35 x 10 6 cm2/V s in AlGaAs/GaAs quantum wells grown by MBE

Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility > 35 x 10 6 cm2/V s in AlGaAs/GaAs quantum wells grown by MBE
G. C.Gardner, S. Fallahi, J. D.Watson, and M. J. Manfra. Journal of Crystal Growth 441,71–77 [PDF]