Repeatable low-temperature negative-differential resistance fromAl0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam-epitaxy on free-standing GaN substrates

Repeatable low-temperature negative-differential resistance fromAl0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam-epitaxy on free-standing GaN substrates
D. Li, L. Tang, C. Edmunds, J. Shao, G. Gardner.. Appl. Phys. Lett. 100, 252105 [PDF]