Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
J. W. P. Hsu, M. J. Manfra, R. J. Molnar, B. Heying, and J. S. Speck.. Applied Physics Letters 81 1, 79-81 [PDF]