Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates
M. J. Manfra, N. G. Weimann, J. W. P. Hsu, L. N. Pfeiffer, K. W. West, and S. N. G. Chu.. Applied Physics Letters 81 8, 1456-1458 [PDF]