Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE

Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE
M. J. Manfra, N. Weimann, Y. Baeyens, P. Roux, and D. M. Tennant.. Electronic Letters 39 8, 694-695 [PDF]