Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates
N. G. Weimann, M. J. Manfra, and T. Wachtler.. IEEE Electron Device Letters 24 2, 57-59 [PDF]