Purdue University · Microsoft Quantum

THE MANFRA GROUP

The Quantum Semiconductor Systems Group
Microsoft Quantum Purdue

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Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities

Homogeneous AlGaN/GaN superlattices grown on free-standing (1 100) GaN substrates by plasma-assisted molecular beam epitaxy

Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76 As modulation-doped quantum wells with extremely low x

Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures

Evidence for effective mass reduction in GaAs/AlGaAs quantum wells

Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide semiconductor field-effect transistors

Physisorption of functionalized gold nanoparticles on AlGaN/GaN highelectron mobility transistors for sensing applications

Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides

Millimeter wave transmission spectroscopy of gated two-dimensional hole systems