Purdue University · Microsoft Quantum

THE MANFRA GROUP

The Quantum Semiconductor Systems Group
Microsoft Quantum Purdue

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Improvement of near-infrared absorption line width in AlGaN/GaN superlattices by optimization of delta-doping location

Contrasting energy scales of the reentrant integer quantum Hall states

Repeatable low-temperature negative-differential resistance fromAl0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam-epitaxy on free-standing GaN substrates

Near-infrared absorption in lattice-matched AlInN/GaN and Strained AlGaN/GaN heterostructures grown by MBE on low-defect GaN substrates

Exploration of the limits to mobility in two-dimensional hole systems in GaAs/AlGaAs quantum wells

Magnetoplasmon resonance in a two-dimensional electron system driven into a zero-resistance state

Collective Nature of the Reentrant Integer Quantum Hall States in the Second Landau Level

Quantitative analysis of the disorder broadening and the intrinsic gap for the ν=5/2 fractional quantum Hall state

Scattering mechanisms in a high-mobility low-density carbon-doped (100) GaAs two-dimensional hole system

Particle-hole asymmetry of fractional quantum Hall states in the second Landau level of a two-dimensional hole system