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THE MANFRA GROUP

The Quantum Semiconductor Systems Group
Microsoft Quantum Purdue

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Nonparabolicity of the conduction band of wurtzite GaN

Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy

High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE

Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates