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As Ga GaAs zinc-blende
Purdue University · Microsoft Quantum
THE MANFRA GROUP
The Quantum Semiconductor Systems Group
Microsoft Quantum Purdue

Archive for category: Uncategorized

AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, 6H-SiC, and HVPE-GaN templates

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2002-03-15 00:00:002025-11-17 13:52:36AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, 6H-SiC, and HVPE-GaN templates

Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2002-03-15 00:00:002025-11-17 13:52:37Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2002-03-15 00:00:002025-11-17 13:52:37Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2001-03-15 00:00:002025-11-17 13:52:38Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2001-03-15 00:00:002025-11-17 13:52:38Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2001-03-15 00:00:002025-11-17 13:52:38Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures

High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2000-03-15 00:00:002025-11-17 13:52:38High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

Absorption spectroscopy in electron double layers: evidence for broken symmetry states

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin2000-03-15 00:00:002025-11-17 13:52:38Absorption spectroscopy in electron double layers: evidence for broken symmetry states

Absorption spectroscopy of charged spin texture excitations at ν=1

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin1998-03-15 00:00:002025-11-17 13:52:38Absorption spectroscopy of charged spin texture excitations at ν=1

Anderson-Fano resonance and shake-up processes in the magnetophotoluminescence of a two-dimensional electron system

https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg 0 0 admin https://manfragroup.org/wp-content/uploads/2026/06/manfra-logo.svg admin1998-03-15 00:00:002025-11-17 13:52:38Anderson-Fano resonance and shake-up processes in the magnetophotoluminescence of a two-dimensional electron system
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Scientific Director

Prof. Michael J. Manfra

Research

Engineering Heterostructures for High Fidelity Spin Qubits

Non-Abelian Phases in the Fractional Quantum Hall Regime

Novel Devices with Lattice-Matched ScAlN/GaN heterostructures

Probing integer and fractional quantum Hall states in electronic interferometers

Quantum Computing with Majorana Fermions in Hybrid Semiconductor/Superconductor Systems

Ultra-High Mobility 2DEGs and 2DHSs in GaAs Grown by Molecular Beam Epitaxy

Facilities

Gallium Arsenide MBE Lab

Semiconductor-Superconductor MBE Lab

Low Temperature Measurement Lab

Nanofabrication Lab

Gallium Nitride MBE Lab

Microsoft Quantum Lab

Dr. Alejandro Alcaraz Ramirez
Dr. Ahmad Azizimanesh
Calvin Freed
Dr. Geoff Gardner
Lindsay Murphy Garza
Dr. Sergei Gronin
Dr. Raymond Kallaher
Dr. Shuang Liang
Tyler Lindemann
Dr. Patrick Sohr
Dr. Alex Webster

Purdue Postdocs & Students

Othman Farooq Alrawi
Dr. Colin Avogadri
Kevin Barrow
David Bondar
Andrew Deng
Zurabi Gachechiladze
Rojila Ghimire
Wyatt Gibbons
Ramon Guerrero-Suarez
Sheng-Wen (Wendy) Huang
Dr. Rajendra Kumar
Dr. Kinga Lasek
Dr. Tanmay Maiti
Matthew Mann
Kyle Ohlin

Purdue University
Birck Nanotechnology Center
Room 1287B
1205 W State Street
West Lafayette, IN 47907-2057
765-496-7703

Purdue University
Department of Physics and Astronomy
Room 84
525 Northwestern Avenue
West Lafayette, IN 47907-2036
765-494-3016

Contact

Purdue University
Birck Nanotechnology Center
Room 1287B
1205 W State Street
West Lafayette, IN 47907-2057
765-496-7703

 
Purdue University
Department of Physics and Astronomy
Room 84
525 Northwestern Avenue
West Lafayette, IN 47907-2036
765-494-3016

Affiliates

Microsoft Quantum
Department of Physics & Astronomy
Birck Nanotechnology Center
Malis Group at Purdue

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